Ultra-low frequency photocurrent self-oscillation in strained InxGa1-xAs quantum well diodes
نویسندگان
چکیده
Ultra-low frequency photocurrent (PC) self-oscillation has been investigated in a In0.15Ga0.85As/Al0.15Ga0.85As quantum-well (QW) diode in details as a function of temperature, excitation power and wavelength. The PC oscillation frequency increases with increasing temperature and illumination power at excitation wavelengths below the leading n = 1 heavy-hole exciton resonance line under reverse bias conditions. The illumination wavelength dependence shows a clear evidence for beating due to two oscillators when photoexcitation by shorter wavelength below 1050 nm is used. These results suggest that the low-frequency PC self-oscillation with a characteristic frequency of about 0.01-0.1 Hz is caused by oscillating electric fields due to two-types of photogenerated charge carriers trapped at deep localized centers within the QW regions. PACS: 73.50.Pz; 73.40.Kp; 72.40.+w; 73.40.Gk
منابع مشابه
Crystal Growth for Substrates of そ= 1.3 たm Laser Diodes by the Travelling Liquidus-Zone Method
The growth of compositionally uniform alloy crystals is promising for variety of applications because lattice parameters as well as electrical and optical properties can be controlled by composition. Among them, InxGa1-xAs bulk crystals are expected as substrates of laser diodes with emitting wavelength of 1.3 μm. High optical gain with small temperature dependence was demonstrated for strained...
متن کاملDirect determination of the ambipolar diffusion length in strained InxGa1-xAs/InP quantum wells by cathodoluminescence
The ambipolar diffusion length is measured in strained &Gal-&/InP quantum wells for several mole fractions in the interval 0.3 <X <0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with result...
متن کاملStudy of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1 XSb quantum wells
InXGa1 XSb has the highest hole mobility amongst all III–V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in InXGa1 XSb quantum wells lifts the degeneracy between the light and heavy hole bands which leads to reduction in the hole effective mass in the lowest occupied band and an increase in the mobility. We present magnetotransport measur...
متن کاملAtomic-resolution study of lattice distortions of buried InxGa1!xAs monolayers in GaAs„001..
X-ray standing wave measurements were used to study the strain in one monolayer of pseudobinary alloy InxGa1!xAs buried in GaAs!001" by molecular-beam epitaxy. The measured In position along the #001$ direction exhibited a nearly linear dependence on the In concentration x, thus supporting the validity of macroscopic continuum elasticity theory at the one-monolayer limit. A random-cluster calcu...
متن کاملPhase stability and the arsenic vacancy defect in In x Ga 1 − x As
The introduction of defects, such as vacancies, into InxGa1−xAs can have a dramatic impact on the physical and electronic properties of the material. Here we employ ab initio simulations of quasirandom supercells to investigate the structure of InxGa1−xAs and then examine the energy and volume changes associated with the introduction of an arsenic vacancy defect. We predict that both defect ene...
متن کامل